STEM/TEM IMAGE SIMULATION

With continued advances in materials fabrication techniques, the sizes of devices are forever shrinking. Exquisite control at the nanometer level of, e.g., interface widths or thin film thicknesses, creates an unprecedented demand for understanding the links between composition and electronic structure, truly at the atomic level.

We offer advanced simulation tools to assist determination of the atomic-level structure and composition of such materials quantitatively from STEM/TEM imaging and spectroscopy data. Simulations can be performed for a broad range of STEM/TEM imaging modes, including 4D-STEM. All codes are written in C++, and are parallelized for speed performance. Non-orthogonal sample geometries are fully supported.